Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures
نویسندگان
چکیده
منابع مشابه
Terahertz optical-Hall effect characterization of two-dimensionalelectron gas properties in AlGaN/GaN high electron mobilitytransistor structures
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Tamara S. Nunner,1 N. A. Sinitsyn,2,3 Mario F. Borunda,2 V. K. Dugaev,4 A. A. Kovalev,2 Ar. Abanov,2 Carsten Timm,5 T. Jungwirth,6,7 Jun-ichiro Inoue,8 A. H. MacDonald,9 and Jairo Sinova2,6 1Institut für Theoretische Physik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany 2Department of Physics, Texas A&M University, College Station, Texas 77843-4242, USA 3CNLS/CCS-3, Los Alamos ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2011
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3556617